Datasheet Driven Silicon Carbide Power MOSFET Model

• Published in: IEEE transactions on power electronics Vol. 29; no. 5
• Main Authors: Mudholkar, M, Ahmed, S, Ericson, MN, Frank, SS, Britton, CL, Mantooth, HA
• Format: Journal Article
• Language: English
• Published: United States 01.05.2014

A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25 degrees...