Datasheet Driven Silicon Carbide Power MOSFET Model

• Published in: IEEE transactions on power electronics Vol. 29; no. 5
• Main Authors: Mudholkar, M, Ahmed, S, Ericson, MN, Frank, SS, Britton, CL, Mantooth, HA
• Format: Journal Article
• Language: English
• Published: United States 01.05.2014
• ISSN: 0885-8993; 1941-0107
• DOI: 10.1109/TPEL.2013.2295774

A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25 degrees C to 225 degrees C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new datasheet driven parameter extraction strategy has been presented which requires only data available in device datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range.