Catalytic CVD 저온공정으로 제조된 나노급 니켈실리사이드의 물성

• Published in: 대한금속·재료학회지, 48(2) pp. 133 - 140
• Main Authors: 최용윤, 김건일, 박종성, 송오성
• Format: Journal Article
• Language: Korean
• Published: 대한금속·재료학회 01.02.2010
• Subjects: 재료공학
• ISSN: 1738-8228; 2288-8241

10 nm thick Ni layers were deposited on 200 nm SiO2/Si substrates using an e-beam evaporator. Then, 60 nm or 20 nm thick α-Si:H layers were grown at low temperature (<200℃) by a Catalytic-CVD. NiSi layers were already formed instantaneously during Cat-CVD process regardless of the thickness of the α-Si. The resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness with the additional rapid thermal annealing up to 500℃ were examined using a four point probe,HRXRD, FE-SEM, TEM, AES, and SPM, respectively. The sheet resistance of the NiSi layer was 12Ω/□regardless of the thickness of the α-Si and kept stable even after the additional annealing process. The thickness of the NiSi layer was 30 nm with excellent uniformity and the surface roughness was maintained under 2 nm after the annealing. Accordingly, our result implies that the low temperature Cat-CVD process with proposed films stack sequence may have more advantages than the conventional CVD process for nano scale NiSi applications. KCI Citation Count: 4