Structural and electrical properties of Ni0.79Mn2.21-x CuxO4 thick-film bolometer with addition of copper (Cu) for application in infrared sensors

• Published in: Journal of Ceramic Processing Research, 17(8) pp. 890 - 893
• Main Authors: 이동진, 이성갑, 김경민, 한명수
• Format: Journal Article
• Language: English
• Published: 세라믹연구소 01.08.2016
• Subjects: 재료공학
• ISSN: 1229-9162; 2672-152X

In this study, Ni0.79Mn2.21-xCuxO4 (0 ≤ x ≤ 0.15) thick films were coated on alumina substrate using a screening printingtechnique. All specimens were sintered in air at 1150 oC for 6 hr and annealed at 830 oC. We investigated structural andelectrical properties with variations of Cu amount. The results from using a screening printing technique have been shown thatall specimens were in a cubic spinel phase formation without any second phase. Our study also found that the electricalresistivity at room temperature and the TCR were decreased as the Cu amount was increased. The Ni0.79Mn2.11Cu0.10O4 thickfilm showed higher electrical properties than any other Ni0.79Mn2.21-xCuxO4 thick film. The resistance at room temperature, TCR,responsivity and detectivity of Ni0.79Mn2.11Cu0.10O4 thick films were 353 Ω-cm and 3.61%/οC, 0.0212 V/W and 1.25 × 104 cmHz1/2/W, respectively. KCI Citation Count: 0