Investigation of p 7 × p 3 Structures Grown on In/Si(111) Surfaces at Room Temperature

• Published in: Journal of the Korean Physical Society pp. 1192 - 1196
• Main Authors: 신동철, 우정석, 전유진, 심형준, 이근섭
• Format: Journal Article
• Language: English
• Published: 한국물리학회 01.10.2015
• Subjects: 물리학
• ISSN: 0374-4884; 1976-8524

In/Si(111) superstructures formed by the deposition of indium on a p 3 × p 3-In surface at room temperature were investigated by using a scanning tunneling microscope (STM). The 2×2, ‘striped’, hexagonal p 7× p 3 ( p 7× p 3-hex), and rectangular p 7× p 3 ( p 7× p 3-rec) structures were identified. We demonstrated that the ‘striped’ and the p 7 × p p 3-hex structures were falsely identified as 7 × p 3-hex and p 7 × p 3-rec in a previous report [A. A. Saranin et al., Phys. Rev. B 74, 035436 (2006)]. As in the p 7 × p 3-hex and p 7 × p 3-rec structures, a p 7 × p 3 periodicity was observed in the resolved STM features of the ‘striped’ structure. These three p 7 × p 3 structures formed at room temperature were shown to be identical to the corresponding In-induced phases formed at high temperature. The apparent height difference between the ‘striped’ and the p 7 × p 3-hex structures in the topographic STM image suggests that the p 7× p 3-hex structure consists of double lpayers of In. This possibility contrasts with recent theoretical predictions of single-layer In for the 7 × p 3-hex structure. KCI Citation Count: 7