Composition dependence of the electrical conductivity of Se85？xTe15Sbx (x = 2, 4, 6, 8 and 10) glass at room temperature

• Published in: Current applied physics pp. 14 - 18
• Main Authors: Vibhav K. Saraswat, K. Singh, N.S. Saxena, V. Kishore, T.P. Sharma, P.K. Saraswat
• Format: Journal Article
• Language: Korean
• Published: 한국물리학회 01.01.2006
• Subjects: 물리학
• ISSN: 1567-1739; 1878-1675

Measurements ofIV characteristics and DC electrical conductivity of Se85. xTe15Sbx (wherex = 2, 4, 6, 8 and 10) glassy thinpellets, prepared by well established melt quenching technique in bulk (pellets of diameter 12mm and thickness. 1m were pre-pared under a constant load of 5 tons), have been carried out at room temperature using Keithley High Resistance Meter/Electrom-eter 6517A. For the recording ofIV characteristics, this equipment was used in FVMI (Force Voltage Measure Current) mode. It isIV characteristics that the glass containing 4 at. wt.% of Sb has the minimum resistance allowing maximumcurrent through the sample as compared to the other at. wt.% of Sb contents e.g. 2, 6, 8 and 10.At 4 at. wt.% of Sb, conductivityrises to 76% of the value obtained for 2 at. wt.% of Sb. Composition dependence of DC conductivity is discussed in terms of thebond formation between Se and Sb at dierent compositions. The conduction mechanism is discussed qualitatively on the basisof PooleFrenkel conduction mechanism. Also the linear relation between ln (I) and V1/2veries that the conduction mechanismis of PooleFrenkel type for both low and high voltage range. The deviation of ohmic behaviour at lower voltage range towardsthe non-ohmic at higher voltage range is due to the high voltage induced temperature eects in the sample. KCI Citation Count: 37