Effect of electric field on primary dark pulses in SPADs for advanced radiation detection applications
In this paper, the single-photon avalanche diodes (SPADs) featuring three different p-well implantation doses (∅p-well) of 5.0 × 1012, 4.0 × 1012, and 3.0 × 1012 atoms/cm2 under the identical device layouts were fabricated and characterized to evaluate the effects of field enhanced mechanisms on pri...
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Published in | Nuclear engineering and technology Vol. 53; no. 2; pp. 618 - 625 |
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Main Authors | , , , |
Format | Journal Article |
Language | Korean |
Published |
2021
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Subjects | |
Online Access | Get full text |
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Summary: | In this paper, the single-photon avalanche diodes (SPADs) featuring three different p-well implantation doses (∅p-well) of 5.0 × 1012, 4.0 × 1012, and 3.0 × 1012 atoms/cm2 under the identical device layouts were fabricated and characterized to evaluate the effects of field enhanced mechanisms on primary dark pulses due to the maximum electric field. From the I-V curves, the breakdown voltages were found as 23.2 V, 40.5 V, and 63.1 V with decreasing ∅p-well, respectively. By measuring DCRs as a function of temperature, we found a reduction of approximately 8% in the maximum electric field lead to a nearly 72% decrease in the DCR at Vex = 5 V and T = 25 ℃. Also, the activation energy increased from 0.43 eV to 0.50 eV, as decreasing the maximum electric field. Finally, we discuss the importance of electric field engineering in reducing the field-enhanced mechanisms contributing to the DCR in SPADs and the benefits on the SPADs related to different types of radiation detection applications. |
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Bibliography: | KISTI1.1003/JNL.JAKO202124452817548 |
ISSN: | 1738-5733 2234-358X |