Potential Wide-gap Materials as a Top Cell for Multi-junction c-Si Based Solar Cells: A Short Review

Silicon heterojunction solar cells (SHJ) have dominated the photovoltaic market up till now but their conversion performance is practically limited to around 26% compared with the theoretical efficiency limit of 29.4%. A silicon based multi-junction devices are expected to overcome this limitation....

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Bibliographic Details
Published inCurrent photovoltaic research Vol. 7; no. 3; pp. 76 - 84
Main Authors Pham, Duy Phong, Lee, Sunhwa, Kim, Sehyeon, Oh, Donghyun, Khokhar, Muhammad Quddamah, Kim, Sangho, Park, Jinjoo, Kim, Youngkuk, Cho, Eun-Chel, Cho, Young-Hyun, Yi, Junsin
Format Journal Article
LanguageKorean
Published 2019
Subjects
Multi-junction silicon solar cells
High efficiency solar cells
III-V/Si solar cells
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Summary:Silicon heterojunction solar cells (SHJ) have dominated the photovoltaic market up till now but their conversion performance is practically limited to around 26% compared with the theoretical efficiency limit of 29.4%. A silicon based multi-junction devices are expected to overcome this limitation. In this report, we briefly review the state-of-art characteristic of wide-gap materials which has played a role as top sub-cells in silicon based multi-junction solar cells. In addition, we indicate significantly practical challenges and key issues of these multi-junction combination. Finally, we focus to some characteristics of III-V/c-Si tandem configuration which are reaching highly record performance in multi-junction silicon solar cells.
Bibliography:KISTI1.1003/JNL.JAKO201928462663689
ISSN:2288-3274
2508-125X