Point defects and grain boundary effects on tensile strength of 3C-SiC studied by molecular dynamics simulations

The tensile strength of irradiated 3C-SiC, SiC with artificial point defects, SiC with symmetric tilt grain boundaries (GBs), irradiated SiC with GBs are investigated using molecular dynamics simulations at 300 K. For an irradiated SiC sample, the tensile strength decreases with the increase of irra...

Full description

Saved in:
Bibliographic Details
Published inNuclear engineering and technology Vol. 51; no. 3; pp. 769 - 775
Main Authors Li, Yingying, Li, Yan, Xiao, Wei
Format Journal Article
LanguageKorean
Published 2019
Subjects
Silicon carbide
Point defects
Irradiation
molecular dynamics
Tensile strength
Grain boundary
Online AccessGet full text

Cover

More Information
Summary:The tensile strength of irradiated 3C-SiC, SiC with artificial point defects, SiC with symmetric tilt grain boundaries (GBs), irradiated SiC with GBs are investigated using molecular dynamics simulations at 300 K. For an irradiated SiC sample, the tensile strength decreases with the increase of irradiation dose. The Young's modulus decreases with the increase of irradiation dose which agrees well with experiment and simulation data. For artificial point defects, the designed point defects dramatically decrease the tensile strength of SiC at low concentration. Among the point defects studied in this work, the vacancies drop the strength the most seriously. SiC symmetric tilt GBs decrease the tensile strength of pure SiC. Under irradiated condition, the tensile strengths of all SiC samples with grain boundaries decrease and converge to certain value because the structures become amorphous and the grain boundaries disappear after high dose irradiation.
Bibliography:KISTI1.1003/JNL.JAKO201919866912767
ISSN:1738-5733
2234-358X