The Optimized Partial Insulator Isolation MOSFET (PiFET)

The proposed partial insulator isolation MOSFET (PiFET) structure, shows the characteristics of improved DIBL and high threshold voltage, using the optimized buried partial insulator shape with a small dielectric constant, compared with the conventional planar MOSFET and silicon on insulator (SOI) s...

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Published inJournal of semiconductor technology and science Vol. 17; no. 5; pp. 729 - 732
Main Authors Kim, Young Kwon, Lee, Jin Sung, Kim, Geon, Park, Taesik, Kim, Hui Jung, Cho, Young Pyo, Park, Young June, Lee, Myoung Jin
Format Journal Article
LanguageKorean
Published 2017
Subjects
partial insulator isolation MOSFET (PiFET)
buried oxide (BOX)
Drain-induced barrier lowering (DIBL)
silicon-on-insulator (SOI)
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Summary:The proposed partial insulator isolation MOSFET (PiFET) structure, shows the characteristics of improved DIBL and high threshold voltage, using the optimized buried partial insulator shape with a small dielectric constant, compared with the conventional planar MOSFET and silicon on insulator (SOI) structures, even though it has the same doping profile.
Bibliography:KISTI1.1003/JNL.JAKO201732663196006
ISSN:1598-1657