Proton and γ-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications

We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary metal-oxide-semiconductor (CMOS) technology). W...

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Bibliographic Details
Published inJournal of astronomy and space sciences Vol. 33; no. 3; pp. 229 - 236
Main Authors Park, Mi Young, Chae, Jang-Soo, Lee, Chol, Lee, Jungsu, Shin, Im Hyu, Kim, Ji Eun
Format Journal Article
LanguageKorean
Published 2016
Subjects
single event effects
DDR
total ionizing dose
LPDDR
SDRAM
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Summary:We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary metal-oxide-semiconductor (CMOS) technology). We compare our radiation tolerance data for LPDDR SDRAM with those of general DDR SDRAM. The data confirms that our devices under test (DUTs) are potential candidates for space flight applications.
Bibliography:KISTI1.1003/JNL.JAKO201627363076166
ISSN:2093-5587
2093-1409