Multi-Dielectric & Multi-Band operations on RF MEMS

Ever increasing demand for microwave operated applications has cultivated need for high-performance universal systems capable of working on multi-bands. This objective can be realized using Multi-Dielectrics in RF MEMS capacitive switch. In this study, we present a detailed analysis of the effect of...

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Bibliographic Details
Published inTransactions on electrical and electronic materials Vol. 17; no. 2; pp. 86 - 91
Main Authors Gogna, Rahul, Gaba, Gurjot Singh, Jha, Mayuri, Prakash, Aditya
Format Journal Article
LanguageKorean
Published 2016
Subjects
RF MEMS
High isolation
Multi-dielectric
Low insertion
Broadband antennas
Multi-band
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Summary:Ever increasing demand for microwave operated applications has cultivated need for high-performance universal systems capable of working on multi-bands. This objective can be realized using Multi-Dielectrics in RF MEMS capacitive switch. In this study, we present a detailed analysis of the effect of various dielectrics on switch performance. The design consists of a capacitive switch and performance is analyzed by changing the dielectric layers beneath the switch. The results are obtained using three different dielectrics including Silicon nitride (7.6), Hafnium dioxide (25) and Titanium oxide (50). Testing of proposed switch yields high isolation (- 87.5 dB) and low insertion loss (- 0.1 dB at 50 GHz) which is substantially better than the conventional switches. The operating bandwidth of the proposed switch (DC to 95 GHz) makes it suitable for wide band microwave applications.
Bibliography:KISTI1.1003/JNL.JAKO201614859336571
ISSN:1229-7607
2092-7592