Cu(In,Ga)Se 2 박막의 KF 처리가 CIGS태양전지에 미치는 영향

• Published in: Current photovoltaic research Vol. 3; no. 2; pp. 65 - 70
• Main Authors: 정광선, 차은석, 문선홍, 안병태, Jeong, Gwang Sun, Cha, Eun Seok, Moon, Sun Hong, Ahn, Byung Tae
• Format: Journal Article
• Language: Korean
• Published: 2015
• Subjects: Surface modification; Post deposition annealing; KF treatment; Cu(In,Ga)Se_2
• ISSN: 2288-3274; 2508-125X

We applied KF on CIGS film to modify CIGS surface with a wider-bandgap surface layer. With the KF deposition the surface of CIGS film had fine particle on the CIGS surface at 350 and $300^{\circ}C$. No fine particle was detected at 500 and $250^{\circ}C$. With the KF treatment, the Ga and O content increased at the surface, while the In and Cu content decreased. The valence band maximum was lowered with KF treatment. The composition profile and band structure were positive side of applying KF on the CIGS surface. However, the efficiency decreased with the KF treatment due to high series resistance, probably due to too thick surface layer. A smaller amount of KF should be supplied and more systematic analysis is necessary to obtain a reproducible higher efficiency CIGS solar cells.