Al 그리드와 ZnO 투명전도막 의 공정변화에 따른 Cu(In,Ga)Se 2 박막태양전지의 특성 연구

• Published in: Current photovoltaic research Vol. 3; no. 1; pp. 32 - 38
• Main Authors: 조보환, 김선철, 문선홍, 김승태, 안병태, Cho, Bo Hwan, Kim, Seon Cheol, Mun, Sun Hong, Kim, Seung Tae, Ahn, Byung Tae
• Format: Journal Article
• Language: Korean
• Published: 2015
• Subjects: i-ZnO; ZnO:Al; elect rode(Al/Ni) film; CIGS solar cell
• ISSN: 2288-3274; 2508-125X

CIGS solar cell consisted of various films. In this research, we investigated electrode materials in $Cu(In,Ga)Se_2$ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was $5.2{\times}10^{-4}{\Omega}{\cdot}cm$ by the rapid thermal annealing at $200^{\circ}C$ for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with $O_2/(Ar+O_2)$ ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.