Pixel Circuit with Threshold Voltage Compensation using a-IGZO TFT for AMOLED

A threshold voltage compensation pixel circuit was developed for active-matrix organic light emitting diodes (AMOLEDs) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs). Oxide TFTs are n-channel TFTs; therefore, we developed a circuit for the n-channel TFT characteristics...

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Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 14; no. 5; pp. 594 - 600
Main Authors Lee, Jae Pyo, Hwang, Jun Young, Bae, Byung Seong
Format Journal Article
LanguageKorean
Published 2014
Subjects
Active matrix organic light-emitting diode (AMOLED)
pixel circuit
threshold voltage
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Summary:A threshold voltage compensation pixel circuit was developed for active-matrix organic light emitting diodes (AMOLEDs) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs). Oxide TFTs are n-channel TFTs; therefore, we developed a circuit for the n-channel TFT characteristics. The proposed pixel circuit was verified and proved by circuit analysis and circuit simulations. The proposed circuit was able to compensate for the threshold voltage variations of the drive TFT in AMOLEDs. The error rate of the OLED current for a threshold voltage change of 3 V was as low as 1.5%.
Bibliography:KISTI1.1003/JNL.JAKO201432252666725
ISSN:1598-1657