Epitaxial Growth of Boron-doped Si Film using a Thin Large-grained Si Seed Layer for Thin-film Si Solar Cells
We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain...
Saved in:
Published in | Current photovoltaic research Vol. 2; no. 1; pp. 1 - 7 |
---|---|
Main Authors | , , , |
Format | Journal Article |
Language | Korean |
Published |
2014
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration. |
---|---|
Bibliography: | KISTI1.1003/JNL.JAKO201411639883228 |
ISSN: | 2288-3274 2508-125X |