Enhanced Internal Quantum Efficiency and Light Extraction Efficiency of Light-emitting Diodes with Air-gap Photonic Crystal Structure Formed by Tungsten Nano-mask

We demonstrate the blue InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) with an embedded air-gap photonic crystal (PC) which was fabricated by the lateral epitaxial overgrowth of GaN layer on the tungsten (W) nano-masks. The periodic air-gap PC was formed by the chemical reaction of hy...

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Bibliographic Details
Published inBulletin of the Korean Chemical Society Vol. 35; no. 3; pp. 705 - 708
Main Authors Cho, Chu-Young, Hong, Sang-Hyun, Kim, Ki Seok, Jung, Gun-Young, Park, Seong-Ju
Format Journal Article
LanguageKorean
Published 2014
Subjects
Air-gap photonic crystal
Tungsten nano-mask
InGaN/GaN light-emitting diode
Internal quantum efficiency
Light extraction efficiency
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Summary:We demonstrate the blue InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) with an embedded air-gap photonic crystal (PC) which was fabricated by the lateral epitaxial overgrowth of GaN layer on the tungsten (W) nano-masks. The periodic air-gap PC was formed by the chemical reaction of hydrogen with GaN on the W nano-mask. The optical output power of LEDs with an air-gap PC was increased by 26% compared to LEDs without an air-gap PC. The enhanced optical output power was attributed to the improvement in internal quantum efficiency and light extraction efficiency by the air-gap PC embedded in GaN layer.
Bibliography:KISTI1.1003/JNL.JAKO201409864555274
ISSN:0253-2964
1229-5949