A New Resistance Model for a Schottky Barrier Diode in CMOS Including N-well Thickness Effect

• Published in: Journal of semiconductor technology and science Vol. 13; no. 4; pp. 381 - 386
• Main Authors: Lee, Jaelin, Kim, Suna, Hong, Jong-Phil, Lee, Sang-Gug
• Format: Journal Article
• Language: Korean
• Published: 2013
• Subjects: CMOS; capacitance; n-well thickness; Schottky barrier diodes; cut-off frequency; resistance

A new resistance model for a Schottky Barrier Diode (SBD) in CMOS technology is proposed in this paper. The proposed model includes the n-well thickness as a variable to explain the operational behavior of a planar SBD which is firstly introduced in this paper. The model is verified using the simula...