Dependence of the 1/f Noise Characteristics of CMOSFETs on Body Bias in Sub-threshold and Strong Inversion Regions

In this paper, the 1/f noise characteristics of n-channel MOSFET (NMOSFET) and p-channel MOSFET (PMOSFET) are analyzed in depth as a function of body bias. The normalized drain current noise, $S_{ID}/I_D{^2}$ showed strong dependence on the body bias in the sub-threshold region for both NMOSFET and...

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Published inJournal of semiconductor technology and science Vol. 13; no. 6; pp. 655 - 661
Main Authors Kwon, Sung-Kyu, Kwon, Hyuk-Min, Kwak, Ho-Young, Jang, Jae-Hyung, Shin, Jong-Kwan, Hwang, Seon-Man, Sung, Seung-Yong, Lee, Ga-Won, Lee, Song-Jae, Han, In-Shik, Chung, Yi-Sun, Lee, Jung-Hwan, Lee, Hi-Deok
Format Journal Article
LanguageKorean
Published 2013
Subjects
CMOSFET
PMOSFET
body bias
NMOSFET
1/f noise
sub-threshold region
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Summary:In this paper, the 1/f noise characteristics of n-channel MOSFET (NMOSFET) and p-channel MOSFET (PMOSFET) are analyzed in depth as a function of body bias. The normalized drain current noise, $S_{ID}/I_D{^2}$ showed strong dependence on the body bias in the sub-threshold region for both NMOSFET and PMOSFET, and NMOSFET showed stronger dependence than PMOSFET on the body bias. On the contrary, both of NMOSFET and PMOSFET do not exhibit the dependence of $S_{ID}/I_D{^2}$ on body bias in strong inversion region, although the noise mechanisms of two MOSFETs are different from each other.
Bibliography:KISTI1.1003/JNL.JAKO201301671904506
ISSN:1598-1657