E-Band Wideband MMIC Receiver Using 0.1 ${\mu}m$ GaAs pHEMT Process

• Published in: ETRI journal Vol. 34; no. 4; pp. 485 - 491
• Main Authors: Kim, Bong-Su, Byun, Woo-Jin, Kang, Min-Soo, Kim, Kwang Seon
• Format: Journal Article
• Language: Korean
• Published: 2012
• Subjects: receiver; SHP mixer; E-band; MMIC; LNA
• ISSN: 1225-6463; 2233-7326

In this paper, the implementations of a $0.1{\mu}m$ gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process for a low noise amplifier (LNA), a subharmonically pumped (SHP) mixer, and a single-chip receiver for 70/80 GHz point-to-point communications are presented. To obtain high-gain performance and good flatness for a 15 GHz (71 GHz to 86 GHz) wideband LNA, a five-stage input/output port transmission line matching method is used. To decrease the package loss and cost, 2nd and 4th SHP mixers were designed. From the measured results, the five-stage LNA shows a gain of 23 dB and a noise figure of 4.5 dB. The 2nd and 4th SHP mixers show conversion losses of 12 dB and 17 dB and input P1dB of -1.5 dBm to 1.5 dBm. Finally, a single-chip receiver based on the 4th SHP mixer shows a gain of 6 dB, a noise figure of 6 dB, and an input P1dB of -21 dBm.