Characteristic of Al-In-Sn-ZnO Thin Film Prepared by FTS System with Hetero Targets

In order to improve efficiency and make a new material thin film, we prepared the Al-In-Sn-ZnO thin film on a glass substrate at room temperature using a Facing Target Sputtering (FTS) system. The FTS system was designed to array two targets that face each other. Two different kinds of targets were...

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Bibliographic Details
Published inTransactions on electrical and electronic materials Vol. 12; no. 2; pp. 76 - 79
Main Authors Hong, Jeong-Soo, Kim, Kyung-Hwan
Format Journal Article
LanguageKorean
Published 2011
Subjects
FTS
ITO
AZO
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Summary:In order to improve efficiency and make a new material thin film, we prepared the Al-In-Sn-ZnO thin film on a glass substrate at room temperature using a Facing Target Sputtering (FTS) system. The FTS system was designed to array two targets that face each other. Two different kinds of targets were installed on the FTS system. We used an ITO ($In_2O_3$ 90wt%, $SnO_2$ 10wt%) target and an AZO (ZnO 98wt%, $Al_2O_3$ 2wt%) target. The AIZTO films were deposited using different applied powers to the targets. The as-deposited AIZTO thin films were investigated using a UV/VIS spectrometer, an X-ray diffratometer (XRD), and Energy Dispersive X-ray spectroscopy (EDX).
Bibliography:KISTI1.1003/JNL.JAKO201115037885682
ISSN:1229-7607
2092-7592