A Subthreshold Swing Model for Symmetric Double-Gate (DG) MOSFETs with Vertical Gaussian Doping

An analytical subthreshold swing model is presented for symmetric double-gate (DG) MOSFETs with Gaussian doping profile in vertical direction. The model is based on the effective conduction path effect (ECPE) concept of uniformly doped symmetric DG MOSFETs. The effect of channel doping on the subthr...

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Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 10; no. 2; pp. 107 - 117
Main Authors Tiwari, Pramod Kumar, Jit, S
Format Journal Article
LanguageKorean
Published 2010
Subjects
2D potential
subthreshold swing
ATLAS simulation
gaussian doped channel
effective conduction path effect (ECPE)
DG MOSFET
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Summary:An analytical subthreshold swing model is presented for symmetric double-gate (DG) MOSFETs with Gaussian doping profile in vertical direction. The model is based on the effective conduction path effect (ECPE) concept of uniformly doped symmetric DG MOSFETs. The effect of channel doping on the subthreshold swing characteristics for non-uniformly doped device has been investigated. The model also includes the effect of various device parameters on the subthreshold swing characteristics of DG MOSFETs. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained by using the commercially available $ATLAS^{TM}$ device simulator. The model is believed to provide a better physical insight and understanding of DG MOSFET devices operating in the subthreshold regime.
Bibliography:KISTI1.1003/JNL.JAKO201008863883738
ISSN:1598-1657