X Band 7.5 W MMIC Power Amplifier for Radar Application

An X-band MMIC power amplifier for radar application is developed using $0.25-{\mu}m$ gate length GaAs pHEMT technology. A bus-bar power combiner at output stage is used to minimize the combiner size and to simplify bias network. The fabricated power amplifier shows 38.75 dBm (7.5 Watt) Psat at 10 G...

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Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 8; no. 2; pp. 139 - 142
Main Authors Lee, Kyung-Ai, Chun, Jong-Hoon, Hong, Song-Cheol
Format Journal Article
LanguageKorean
Published 2008
Subjects
high power amplifier
X band
radar application
MMIC
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Summary:An X-band MMIC power amplifier for radar application is developed using $0.25-{\mu}m$ gate length GaAs pHEMT technology. A bus-bar power combiner at output stage is used to minimize the combiner size and to simplify bias network. The fabricated power amplifier shows 38.75 dBm (7.5 Watt) Psat at 10 GHz. The chip size is $3.5\;mm{\times}3.9\;mm$.
Bibliography:KISTI1.1003/JNL.JAKO200827448608191
ISSN:1598-1657