Influence of Nitrogen/argon Flow Ratio on the Crystallization of Hafnium Oxynitride Films

Hafnium oxynitride films have been deposited onto a silicon substrate by means of radio frequency (RF) reactive sputtering using a hafnium dioxide $(HfO_2)$ target with a variety of nitrogen! argon $(N_2/Ar)$ gas flow ratios. Auger electron spectroscopy (AES)results confirm that $N_2$ was successful...

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Published inTransactions on electrical and electronic materials Vol. 9; no. 1; pp. 12 - 15
Main Authors Choi, Dae-Han, Choi, Jong-In, Park, Hwan-Jin, Chae, Joo-Hyun, Kim, Dae-Il
Format Journal Article
LanguageKorean
Published 2008
Subjects
XRR
Reactive sputtering
Hafnium oxynitride
XRD
Nitrogen
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Summary:Hafnium oxynitride films have been deposited onto a silicon substrate by means of radio frequency (RF) reactive sputtering using a hafnium dioxide $(HfO_2)$ target with a variety of nitrogen! argon $(N_2/Ar)$ gas flow ratios. Auger electron spectroscopy (AES)results confirm that $N_2$ was successfully incorporated into the HfON films. An increase in the $N_2/Ar$ gas flow ratio resulted in metal oxynitride formation. The films prepared with a $N_2/Ar$ flow ratio of 20/20 sccm show (222), (530), and (611) directions of $HfO_2N_2$, and the (-111), (311) directions of $HfO_2$. From X-ray reflectometry measurements, it can be concluded that with $N_2$ incorporated into the HfON films, the film density increases. The density increases from 9.8 to $10.1g/cm^3$. XRR also reveals that the surface roughness is related to the $N_2/Ar$ flow ratio.
Bibliography:KISTI1.1003/JNL.JAKO200814364033001
ISSN:1229-7607
2092-7592