Influence of Nitrogen/argon Flow Ratio on the Crystallization of Hafnium Oxynitride Films
Hafnium oxynitride films have been deposited onto a silicon substrate by means of radio frequency (RF) reactive sputtering using a hafnium dioxide $(HfO_2)$ target with a variety of nitrogen! argon $(N_2/Ar)$ gas flow ratios. Auger electron spectroscopy (AES)results confirm that $N_2$ was successful...
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Published in | Transactions on electrical and electronic materials Vol. 9; no. 1; pp. 12 - 15 |
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Main Authors | , , , , |
Format | Journal Article |
Language | Korean |
Published |
2008
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Subjects | |
Online Access | Get full text |
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Summary: | Hafnium oxynitride films have been deposited onto a silicon substrate by means of radio frequency (RF) reactive sputtering using a hafnium dioxide $(HfO_2)$ target with a variety of nitrogen! argon $(N_2/Ar)$ gas flow ratios. Auger electron spectroscopy (AES)results confirm that $N_2$ was successfully incorporated into the HfON films. An increase in the $N_2/Ar$ gas flow ratio resulted in metal oxynitride formation. The films prepared with a $N_2/Ar$ flow ratio of 20/20 sccm show (222), (530), and (611) directions of $HfO_2N_2$, and the (-111), (311) directions of $HfO_2$. From X-ray reflectometry measurements, it can be concluded that with $N_2$ incorporated into the HfON films, the film density increases. The density increases from 9.8 to $10.1g/cm^3$. XRR also reveals that the surface roughness is related to the $N_2/Ar$ flow ratio. |
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Bibliography: | KISTI1.1003/JNL.JAKO200814364033001 |
ISSN: | 1229-7607 2092-7592 |