Etching Properties of ZnS:Mn Thin Films in an Inductively Coupled Plasma
ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was...
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Published in | Transactions on electrical and electronic materials Vol. 9; no. 1; pp. 1 - 5 |
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Main Authors | , , , , |
Format | Journal Article |
Language | Korean |
Published |
2008
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Subjects | |
Online Access | Get full text |
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Summary: | ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a $BCl_3(20)/Ar(80)$ gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200V, a total gas flow of 20 sccm, and a chamber pressure of 1Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in $BCl_3/Ar$ plasma. |
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Bibliography: | KISTI1.1003/JNL.JAKO200814364032989 |
ISSN: | 1229-7607 2092-7592 |