Etching Properties of ZnS:Mn Thin Films in an Inductively Coupled Plasma

ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was...

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Bibliographic Details
Published inTransactions on electrical and electronic materials Vol. 9; no. 1; pp. 1 - 5
Main Authors Kim, Gwan-Ha, Woo, Jong-Chang, Kim, Kyoung-Tae, Kim, Dong-Pyo, Kim, Chang-Il
Format Journal Article
LanguageKorean
Published 2008
Subjects
Zinc sulfide
Inductively coupled plasma
Electroluminescence device
Etching
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Summary:ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a $BCl_3(20)/Ar(80)$ gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200V, a total gas flow of 20 sccm, and a chamber pressure of 1Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in $BCl_3/Ar$ plasma.
Bibliography:KISTI1.1003/JNL.JAKO200814364032989
ISSN:1229-7607
2092-7592