A New Scaling Theory for the Effective Conducting Path Effect of Dual Material Surrounding Gate Nanoscale MOSFETs

In this Paper, we present a scaling theory for dual material surrounding gate (DMSGTs) MOSFETs, which gives a guidance for the device design and maintaining a precise subthreshold factor for given device parameters. By studying the subthreshold conducting phenomenon of DMSGTs, the effective conducti...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 8; no. 1; pp. 92 - 97
Main Authors Balamurugan, N.B, Sankaranarayanan, K, Suguna, M
Format Journal Article
LanguageKorean
Published 2008
Subjects
drain induced barrier lowering (DIBL)
Dual material surrounding gate (DMSG) MOSFETs
scaling theory
two-dimensional (2-D) modeling
short channel effects (SCEs)
Online AccessGet full text

Cover

More Information
Summary:In this Paper, we present a scaling theory for dual material surrounding gate (DMSGTs) MOSFETs, which gives a guidance for the device design and maintaining a precise subthreshold factor for given device parameters. By studying the subthreshold conducting phenomenon of DMSGTs, the effective conductive path effect (ECPE) is employed to acquire the natural length to guide the design. With ECPE, the minimum channel potential is used to monitor the subthreshold behavior. The effect of ECPE on scaling factor significantly improves the subthreshold swing compared to conventional scaling rule. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.
Bibliography:KISTI1.1003/JNL.JAKO200814357776624
ISSN:1598-1657