RF-Sputted Vanadium Oxide Thin Films:Effect of Oxygen Partial Pressure on Structural and Electrochemical Properties

• Published in: Bulletin of the Korean Chemical Society Vol. 22; no. 9; pp. 1015 - 1018
• Main Authors: 박용준, 박남규, 류광선, 장순호, 박신종, 윤선미, 김동국, Park, Yong Jun, Park, Nam Gyu, Ryu, Gwang Seon, Jang, Sun Ho, Park, Sin Jong, Yun, Seon Mi, Kim, Dong Guk
• Format: Journal Article
• Language: Korean
• Published: 2001
• Subjects: Microbattey; RF-sputtering; Vanadium oxide; Thin film
• ISSN: 0253-2964; 1229-5949

Vanadium oxide thin films with thickness of about 2000 $\AA$ have been prepared by radio frequency sputter deposition using a V2O5 target in a mixed argon and oxygen atmosphere with different Ar/O2 ratio ranging from 99/1 to 90/10. X-ray diffraction and X-ray absorption near edge structure spectroscopic studies show that the oxygen content higher than 5% crystallizes a stoichiometric V2O5 phase, while oxygen deficient phase is formed in the lower oxygen content. The oxygen content in the mixed Ar + O2 has a significant influence on electrochemical lithium insertion/deinsertion property. The discharge-charge capacity of vanadium oxide film increases with increasing the reactive oxygen content. The V2O5 film deposited at the Ar/O2 ratio of 90/10 exhibits high discharge capacity of 100 ${\mu}Ah/cm2-{\mu}m$ along with good cycle performance.