ZnO/Ag/SnO 2 적층박막의 두께 변화에 따른 전기적, 광학적 특성 연구

ZnO/Ag/SnO 2 (ZAS) tri-layer films were prepared on glass substrates via RF and DC magnetron sputtering, and then the influence of the thickness of the ZnO and SnO 2 layers on the optical and electrical properties of the ZAS films was investigated. As deposited ZnO 50 nm/Ag 10 nm/SnO 2 50 nm films s...

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Published in대한금속재료학회지 Vol. 57; no. 5; pp. 324 - 327
Main Authors 김유성, Yu-sung Kim, 최진영, Jin-young Choi, 박윤제, Yun-je Park, 최수현, Su-hyeon Choe, 공영민, Young-min Kong, 김대일, Daeil Kim
Format Journal Article
LanguageKorean
Published 대한금속재료학회 05.05.2019
Subjects
electrical properties
optical properties
thin film
x-ray diffraction
ZnO/Ag/SnO 2
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Summary:ZnO/Ag/SnO 2 (ZAS) tri-layer films were prepared on glass substrates via RF and DC magnetron sputtering, and then the influence of the thickness of the ZnO and SnO 2 layers on the optical and electrical properties of the ZAS films was investigated. As deposited ZnO 50 nm/Ag 10 nm/SnO 2 50 nm films showed a higher figure of merit, 1.08 × 10 -2 Ω -1 , than the other films due to a high visible transmittance of 80.8% and a low resistivity of 1.21 × 10 -4 Ωcm. From the observed results, it can be concluded that the ZnO 50 nm/Ag 10 nm/SnO 2 50 nm tri-layer films can be used as a substitute for conventional transparent conducting oxide films in various opto-electrical applications. (Received March 20, 2019; Accepted April 4, 2019)
Bibliography:The Korean Institute of Metals and Materials
ISSN:1738-8228