Enhanced Room-Temperature 1.6 \mbox{$\mu$m} Electroluminescence from Si-Based Double-Heterostructure Light-Emitting Diodes Using Iron Disilicide

We have fabricated Si/$\beta$-FeSi 2 /Si (SFS) double-heterostructure (DH) light-emitting diodes (LEDs) on Si(111) substrates with $\beta$-FeSi 2 thickness ranging from 80 nm to 1 \mbox{$\mu$m}, and Si 0.7 Ge 0.3 /$\beta$-FeSi 2 /Si 0.7 Ge 0.3 (S \text{G FS \text{G ) DH LEDs with a 200-nm-thick $\be...

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Bibliographic Details
Published inJpn J Appl Phys Vol. 49; no. 4; pp. 04DG16 - 04DG16-4
Main Authors Suzuno, Mitsushi, Koizumi, Tomoaki, Kawakami, Hideki, Suemasu, Takashi
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 25.04.2010
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Summary:We have fabricated Si/$\beta$-FeSi 2 /Si (SFS) double-heterostructure (DH) light-emitting diodes (LEDs) on Si(111) substrates with $\beta$-FeSi 2 thickness ranging from 80 nm to 1 \mbox{$\mu$m}, and Si 0.7 Ge 0.3 /$\beta$-FeSi 2 /Si 0.7 Ge 0.3 (S \text{G FS \text{G ) DH LEDs with a 200-nm-thick $\beta$-FeSi 2 layer using lattice-matched Si 0.7 Ge 0.3 layers by molecular-beam epitaxy. The electroluminescence (EL) peaked at an emission wavelength of approximately 1.6 \mbox{$\mu$m} at room temperature. As the thickness of the $\beta$-FeSi 2 layer was increased in the SFS DH LEDs, the emission power of EL increased for a given current density $J$. EL with an emission power of over 0.4 mW and an external quantum efficiency of approximately 0.1% was achieved for the SFS DH LED with a 1-\mbox{$\mu$m}-thick $\beta$-FeSi 2 layer. The smallest $J$ value necessary for EL output, which is approximately 1 A/cm 2 , was achieved for the S \text{G FS \text{G DH LEDs.
Bibliography:(Color online) RHEED patterns taken along Si[$1\bar{1}0$] after the growth of (a) $\beta$-FeSi 2 and (b) p + -Si layers for the SFS LED with a 1-\mbox{$\mu$m}-thick $\beta$-FeSi 2 layer. $\theta$--$2\theta$ XRD patterns of SFS LEDs with different $\beta$-FeSi 2 layer thicknesses. EL emission power with respect to injection current $I$ and current density $J$ measured at RT for SFS DH LEDs with $\beta$-FeSi 2 layer thicknesses of 80 nm, 200 nm, and 1 \mbox{$\mu$m}. Inset: EL spectra measured at RT for LED with an 80-nm-thick $\beta$-FeSi 2 layer. (Color online) RHEED patterns taken along the [$1\bar{1}0$] after the growth of (a) RDE-grown $\beta$-FeSi 2 template, (b) MBE-grown $\beta$-FeSi 2 , and (c) Si 0.7 Ge 0.3 layers for the S \text{G FS \text{G DH LED. $\theta$--$2\theta$ XRD pattern of the S \text{G FS \text{G DH LED. EL spectra of the S \text{G FS \text{G DH LED measured at RT. The dependence of integrated EL intensity on $J$ in shown in the inset. Relationship between $\beta$-FeSi 2 thickness and $J$ value necessary for EL output in SFS and S \text{G FS \text{G DH LEDs. Normalized integrated EL intensity versus inverse temperature for the S \text{G FS \text{G DH LED at $J=1.8$ A/cm 2 .
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.04DG16