130 mA mm−1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts
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Published in | Applied physics express Vol. 14; no. 7 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
22.06.2021
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Subjects | |
Online Access | Get full text |
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Bibliography: | APEX-105083.R1 |
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ISSN: | 1882-0778 1882-0786 |
DOI: | 10.35848/1882-0786/ac07ef |