Low Temperature Epitaxy of In Situ GaDoped Si1-XGex: Dopant Incorporation, Structural and Electrical Properties

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Bibliographic Details
Published inECS transactions Vol. 109; no. 4; pp. 249 - 259
Main Authors Rengo, Gianluca, Porret, Clement, Hikavyy, Andriy Yakovitch, Coenen, Gitte, Ayyad, Mustafa, Morris, Richard J. H., Pollastri, Simone, De Souza, Danilo Oliveira, Grandjean, Didier, Loo, Roger, Vantomme, Andre
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 30.09.2022
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ISSN:1938-5862
1938-6737
DOI:10.1149/10904.0249ecst