Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applicationsProject supported by the National Natural Science Foundation of China (No. 61204086)

• Published in: Journal of semiconductors Vol. 36; no. 7
• Main Authors: Pongthavornkamol, Tiwat, Pang, Lei, Wang, Xinhua, Huang, Sen, Liu, Guoguo, Yuan, Tingting, Liu, Xinyu
• Format: Journal Article
• Language: English
• Published: Chinese Institute of Electronics 01.07.2015
• Subjects: AlGaN/GaN HEMT; pulsed; self-heating effect; trapping effect
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/36/7/074006

An optimized modeling method of 8 × 100 μm AlGaN/GaN-based high electron mobility transistor (HEMT) for accurate continuous wave (CW) and pulsed power simulations is proposed. Since the self-heating effect can occur during the continuous operation, the power gain from the continuous operation significantly decreases when compared to a pulsed power operation. This paper extracts power performances of different device models from different quiescent biases of pulsed current-voltage (I-V) measurements and compared them in order to determine the most suitable device model for CW and pulse RF microwave power amplifier design. The simulated output power and gain results of the models at Vgs = −3.5 V, Vds = 30 V with a frequency of 9.6 GHz are presented.