Understanding of impact of carbon doping on background carrier conduction in GaN Project partially supported by the National Key Research and Development Program of China (Grant No. 2017YFB0402800), the Key Research and Development Program of Guangdong Province, China (Grant No. 2020B010174003), the National Natural Science Foundation of China (Grant No. U1601210), and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011)

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Bibliographic Details
Published inChinese physics B Vol. 30; no. 10
Main Authors Liu, Zhenxing, Li, Liuan, Zhang, Jinwei, Wu, Qianshu, Wang, Yapeng, Qiu, Qiuling, Wu, Zhisheng, Liu, Yang
Format Journal Article
LanguageEnglish
Published Chinese Physical Society and IOP Publishing Ltd 01.11.2021
Subjects
chemical vapor deposition
electrical properties and parameters
electronic transport
semiconductor materials
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ISSN:1674-1056
DOI:10.1088/1674-1056/abfa0d