Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitrideProject supported by the National Natural Science Foundation of China (Grant Nos. 61176092 and 61474094), the National Basic Research Program of China (Grant Nos. 2012CB933503 and 2013CB632103), and the National Natural Science Foundation of China-National Research Foundation of Korea Joint Research Project (Grant No. 11311140251)

Modulation of the Schottky barrier heights was successfully demonstrated for WNx/p-Ge and WNx/n-Ge contacts by increasing the nitrogen component in the WNx films. The WN0.38/p-Ge contact exhibits rectifying characteristic and an apparent Schottky barrier of 0.49 eV while the WN0.38/n-Ge Schottky con...

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Published inChinese physics B Vol. 24; no. 7
Main Authors Wei, Jiang-Bin, Chi, Xiao-Wei, Lu, Chao, Wang, Chen, Lin, Guang-Yang, Wu, Huan-Da, Huang, Wei, Li, Cheng, Chen, Song-Yan, Liu, Chun-Li
Format Journal Article
LanguageEnglish
Published IOP Publishing 18.05.2015
Subjects
Fermi-level pinning
germanium
Schottky barrier height modulation
tungsten nitride
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Summary:Modulation of the Schottky barrier heights was successfully demonstrated for WNx/p-Ge and WNx/n-Ge contacts by increasing the nitrogen component in the WNx films. The WN0.38/p-Ge contact exhibits rectifying characteristic and an apparent Schottky barrier of 0.49 eV while the WN0.38/n-Ge Schottky contact exhibits quasi-Ohmic current-voltage characteristics. Dipoles formed at the contact interface by the difference of the Pauling electronegativities of Ge and N are confirmed to alleviate the Fermi-level pinning effect.
ISSN:1674-1056
DOI:10.1088/1674-1056/24/7/077306