Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling Supported by the National Key R&D Program of China under Grant No 2016YFB0400104

Metal organic chemical vapor deposition (MOCVD) growth systems are one of the main types of equipment used for growing single crystal materials, such as GaN. To obtain film epitaxial materials with uniform performance, the flow field and temperature field in a GaN-MOCVD reactor are investigated by m...

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Bibliographic Details
Published inChinese physics letters Vol. 35; no. 9
Main Authors Mei, Shu-Zhe, Wang, Quan, Hao, Mei-Lan, Xu, Jian-Kai, Xiao, Hong-Ling, Feng, Chun, Jiang, Li-Juan, Wang, Xiao-Liang, Liu, Feng-Qi, Xu, Xian-Gang, Wang, Zhan-Guo
Format Journal Article
LanguageEnglish
Published Chinese Physical Society and IOP Publishing Ltd 01.09.2018
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Summary:Metal organic chemical vapor deposition (MOCVD) growth systems are one of the main types of equipment used for growing single crystal materials, such as GaN. To obtain film epitaxial materials with uniform performance, the flow field and temperature field in a GaN-MOCVD reactor are investigated by modeling and simulating. To make the simulation results more consistent with the actual situation, the gases in the reactor are considered to be compressible, making it possible to investigate the distributions of gas density and pressure in the reactor. The computational fluid dynamics method is used to study the effects of inlet gas flow velocity, pressure in the reactor, rotational speed of graphite susceptor, and gases used in the growth, which has great guiding significance for the growth of GaN film materials.
ISSN:0256-307X
DOI:10.1088/0256-307X/35/9/098101