Transport Studies on GaAs/AlGaAs Two-Dimensional Electron Systems Modulated by Triangular Array of AntidotsSupported by the National Basic Research Program of China under Grant Nos 2015CB921101 and 2014CB920904, and the Strategic Priority Research Program B of Chinese Academy of Sciences under Grant No XDB07010200

• Published in: Chinese physics letters Vol. 35; no. 7
• Main Authors: Yang, Chu-Hong, Zheng, Shu-Yu, Fan, Jie, Jing, Xiu-Nian, Ji, Zhong-Qing, Liu, Guang-Tong, Yang, Chang-Li, Lu, Li
• Format: Journal Article
• Language: English
• Published: Chinese Physical Society and IOP Publishing Ltd 01.07.2018
• ISSN: 0256-307X
• DOI: 10.1088/0256-307X/35/7/077301

Triangular antidot lattices of various periods and aspect ratios are fabricated on high mobility GaAs/AlGaAs two-dimensional electron systems (2DESs), and are characterized by magneto-transport measurements at low temperatures down to 300 mK. Commensurability peaks are generally observed in the magneto-resistivity ρxx, and remarkable similarity between dρxy/dB and ρxx is found. In samples of relatively large aspect ratio d/a, the Aharonov-Bohm-type oscillations are clearly observed in both ρxx and ρxy, as well as the quenching of the Hall resistivity ρxy in the vicinity of B = 0. These observations evince the good quality of our samples, and attest to the adequate preparation for fabricating antidot lattices of a reduced period to realize artificial graphene from GaAs/AlGaAs 2DESs.