Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors Supported by the National Natural Science Foundation of China under Grant Nos 61574048 and 61204112, the Science and Technology Research Project of Guangdong Province under Grant Nos 2015B090912002 and 2014A030313656, and the Pearl River S&T Nova Program of Guangzhou

The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage...

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Bibliographic Details
Published inChinese physics letters Vol. 34; no. 1
Main Authors Liu, Yuan, Liu, Kai, Chen, Rong-Sheng, Liu, Yu-Rong, En, Yun-Fei, Li, Bin, Fang, Wen-Xiao
Format Journal Article
LanguageEnglish
Published Chinese Physical Society and IOP Publishing Ltd 01.01.2017
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Summary:The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease, while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated. Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.
ISSN:0256-307X
DOI:10.1088/0256-307X/34/1/018501