Effects of high-temperature O2 annealing on Al2O3 blocking layer and Al2O3/Si3N4 interface for MANOS structures

In this paper, we have investigated the effects of O2 post-deposition annealing (PDA) on metal/Al2O3/Si3N4/SiO2/Si (MANOS) devices. Compared with low-energy plasma oxygen pre-treatment and the N2 PDA process, the O2 PDA process can lead to a significant retention improvement. The improvement is attr...

Full description

Saved in:
Bibliographic Details
Published inJournal of physics. D, Applied physics Vol. 45; no. 18
Main Authors Xu, Zhongguang, Zhu, Chenxin, Huo, Zongliang, Zhao, Shengjie, Liu, Ming
Format Journal Article
LanguageEnglish
Published IOP Publishing 18.04.2012
Online AccessGet full text

Cover

More Information
Summary:In this paper, we have investigated the effects of O2 post-deposition annealing (PDA) on metal/Al2O3/Si3N4/SiO2/Si (MANOS) devices. Compared with low-energy plasma oxygen pre-treatment and the N2 PDA process, the O2 PDA process can lead to a significant retention improvement. The improvement is attributed to the removal of oxygen vacancies in Al2O3 block oxide and the oxygen incorporation at the Si3N4/Al2O3 interfacial layer which is determined by x-ray photoelectron spectroscopy (XPS) depth profiling and electrical characteristics. Metal/Al2O3/SiO2/Si (MAOS) devices are also studied to confirm these effects. As a result, we consider that the O2 PDA process is a crucial process for future MANOS-type memory devices.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/45/18/185103