Transversely diode-pumped -switched Nd : YAG laser with injection of radiation from a single-frequency semiconductor laser

• Published in: Quantum electronics (Woodbury, N.Y.) Vol. 46; no. 10; pp. 870 - 872
• Main Authors: Bogdanovich, M.V., Duraev, V.P., Kalinov, V.S., Kostik, O.E., Lantsov, K.I., Lepchenkov, K.V., Mashko, V.V., Ryabtsev, A.G., Ryabtsev, G.I., Teplyashin, L.L.
• Format: Journal Article
• Language: English
• Published: Turpion Ltd and the Russian Academy of Sciences 01.10.2016
• Subjects: diode pumping; injection of narrowband radiation; semiconductor laser module; solid-state laser
• ISSN: 1063-7818; 1468-4799
• DOI: 10.1070/QEL16165

A -switched Nd : YAG laser with a high-power transverse diode pumping and injection of seed radiation generated by a single-frequency semiconductor laser is described. The threshold seed radiation power at which the -switched Nd : YAG switches to the single-frequency mode is (radiation intensity . With increasing injection power, the spectral and power characteristics of the -switched laser almost do not change at a constant excitation of its active medium. The spectral linewidth of the -switched Nd : YAG laser with injection from a TLD-1060-14BF single-frequency semiconductor laser module does not exceed (wavelength .