Quaternary diborides-improving the oxidation resistance of TiB2 ± z coatings by disilicide alloying

To overcome the limited oxidation resistance of the emerging class of transition metal borides, we suggest within this study novel quaternary diborides, Ti-TM-Si-B 2 ± z (TM = Ta, Mo), achieving the compromise between excellent oxidation resistance and requirements of hard coatings. Single-phase AlB...

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Published inMaterials Research Letters Vol. 11; no. 9; pp. 733 - 741
Main Authors Bahr, Ahmed, Beck, Oskar, Glechner, Thomas, Grimmer, Alexander, Wojcik, Tomasz, Kutrowatz, Philip, Ramm, Jürgen, Hunold, Oliver, Kolozsvári, Szilard, Polcik, Peter, Ntemou, Eleni, Primetzhofer, Daniel, Riedl, Helmut
Format Report
LanguageEnglish
Published Taylor & Francis 02.09.2023
Subjects
Disilicides
oxidation resistance
sputtering
thin films
Titanium diboride
UHTC
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Summary:To overcome the limited oxidation resistance of the emerging class of transition metal borides, we suggest within this study novel quaternary diborides, Ti-TM-Si-B 2 ± z (TM = Ta, Mo), achieving the compromise between excellent oxidation resistance and requirements of hard coatings. Single-phase AlB 2 -type structured Ti-TM-Si-B 2 ± z films (3-5 µm) are sputter-deposited from TiB 2 /TMSi 2 targets. The Ti-Ta-Si-B 2 ± z coatings exhibit 36 GPa in hardness, while maintaining strongly retarded oxidation kinetics till 1000°C. Ti-Mo-Si-B 2 ± z coatings preserve a hardness up to 27 GPa, although outperforming all their counterparts by featuring outstanding oxidation resistance with 440 nm oxide scale thickness after 1 h at 1200°C. First report on quaternary Ti-TM-Si-B 2 ± z coatings stabilized in hexagonal AlB 2 -prototype structures. These hard coating materials exhibit unprecedented oxidation resistance up to 1200°C due to the formation of Si-rich scales.
ISSN:2166-3831
DOI:10.1080/21663831.2023.2225554