A 24-30 GHz Power Amplifier with >20 dBm Psat and <0.1 dB AM-AM Distortion for 5G Applications

This paper presents a power amplifier (PA) designed as a part of a transceiver front-end fabricated in 0.13-\mu \mathrm{m} SiGe BiCMOS. The PA shares its output antenna port with a low noise amplifier using a transmission/reception switch. The output matching network of the PA is designed to provide...

Full description

Saved in:
Bibliographic Details
Published in2022 Asia-Pacific Microwave Conference (APMC) pp. 273 - 275
Main Authors Kamidaki, Chihiro, Okuyama, Yuma, Kubo, Tatsuo, Lee, Wooram, Ozdag, Caglar, Sadhu, Bodhisatwa, Yamaguchi, Yo, Guan, Ning
Format Conference Proceeding
LanguageEnglish
Published The Institute of Electronics Information and Communication Engineers (IEICE) of Japan 29.11.2022
Subjects
5G mobile communication
ACLR
AM-AM
BiCMOS integrated circuits
Distortion
Distortion measurement
EVM
mm-wave
OFDM
PAE
power amplifier
Power amplifiers
Power measurement
SiGe BiCMOS tecnology
Online AccessGet full text

Cover

More Information
Summary:This paper presents a power amplifier (PA) designed as a part of a transceiver front-end fabricated in 0.13-\mu \mathrm{m} SiGe BiCMOS. The PA shares its output antenna port with a low noise amplifier using a transmission/reception switch. The output matching network of the PA is designed to provide high output power, low AM-AM distortion, and uniform performance over frequencies in the range of 24.25-29.5 GHz. Measurements of the front-end in TX mode demonstrate peak \boldsymbol{S}_{21} of 30.3 dB at 26.7 GHz, \boldsymbol{S}_{21} 3-dB bandwidth of 9.8 GHz from 22.2 to 32.0 GHz, and saturated output power (\boldsymbol{P}_{\text{sat}}) above 20 dBm with power-added efficiency (PAE) above 22% from 24 to 30 GHz. For a 64-QAM 400 MHz bandwidth OFDM signal, -25 dBc EVM is measured at an average output power of 12.3 dBm and average PAE of 8.8%. The PA achieves a competitive ITRS FoM of 92.9.
DOI:10.23919/APMC55665.2022.9999941