Calculated and measured silicon p-i-n limiter short-pulse damage thresholds
Limiters used to protect sensitive electronics from high-level RF radiation are themselves subject to damage. A combined theoretical and experimental study has been made of damage thresholds of silicon PIN limiters with intrinsic region widths of 0.5 to 10 mu m, using 1.5-9.4-GHz frequencies, and pu...
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Published in | IEEE International Digest on Microwave Symposium pp. 761 - 764 vol.2 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
1990
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Subjects | |
Online Access | Get full text |
DOI | 10.1109/MWSYM.1990.99690 |
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Abstract | Limiters used to protect sensitive electronics from high-level RF radiation are themselves subject to damage. A combined theoretical and experimental study has been made of damage thresholds of silicon PIN limiters with intrinsic region widths of 0.5 to 10 mu m, using 1.5-9.4-GHz frequencies, and pulse lengths from 10 to 1000 ns. This work is also useful in designing dual-diode limiters to reduce spike leakage and to increase the damage threshold.< > |
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AbstractList | Limiters used to protect sensitive electronics from high-level RF radiation are themselves subject to damage. A combined theoretical and experimental study has been made of damage thresholds of silicon PIN limiters with intrinsic region widths of 0.5 to 10 mu m, using 1.5-9.4-GHz frequencies, and pulse lengths from 10 to 1000 ns. This work is also useful in designing dual-diode limiters to reduce spike leakage and to increase the damage threshold.< > |
Author | Ward, A.L. Tan, R.J. Kaul, R. |
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Snippet | Limiters used to protect sensitive electronics from high-level RF radiation are themselves subject to damage. A combined theoretical and experimental study has... |
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SubjectTerms | Frequency Heating Laboratories P-i-n diodes PIN photodiodes Protection Pulse measurements Silicon Space vector pulse width modulation Voltage |
Title | Calculated and measured silicon p-i-n limiter short-pulse damage thresholds |
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