Calculated and measured silicon p-i-n limiter short-pulse damage thresholds

Limiters used to protect sensitive electronics from high-level RF radiation are themselves subject to damage. A combined theoretical and experimental study has been made of damage thresholds of silicon PIN limiters with intrinsic region widths of 0.5 to 10 mu m, using 1.5-9.4-GHz frequencies, and pu...

Full description

Saved in:
Bibliographic Details
Published inIEEE International Digest on Microwave Symposium pp. 761 - 764 vol.2
Main Authors Ward, A.L., Tan, R.J., Kaul, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1990
Subjects
Frequency
Heating
Laboratories
P-i-n diodes
PIN photodiodes
Protection
Pulse measurements
Silicon
Space vector pulse width modulation
Voltage
Online AccessGet full text
DOI10.1109/MWSYM.1990.99690

Cover

More Information
Summary:Limiters used to protect sensitive electronics from high-level RF radiation are themselves subject to damage. A combined theoretical and experimental study has been made of damage thresholds of silicon PIN limiters with intrinsic region widths of 0.5 to 10 mu m, using 1.5-9.4-GHz frequencies, and pulse lengths from 10 to 1000 ns. This work is also useful in designing dual-diode limiters to reduce spike leakage and to increase the damage threshold.< >
DOI:10.1109/MWSYM.1990.99690