Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N/sub 2/O-grown oxides and NO RTA treatment
Ultra-thin gate dielectrics processed by remote plasma nitridation (RPN) of N/sub 2/O-grown oxides subsequently followed by NO RTA treatment (N/sub 2/O+RPN+NO process) are reported for the first time as a means to extend the reliability scaling limit of SiO/sub 2/- / oxynitride-based gate dielectric...
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Published in | 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) pp. 268 - 271 |
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Main Authors | , , , , , , , , , , , , , , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2002
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Subjects | |
Online Access | Get full text |
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Summary: | Ultra-thin gate dielectrics processed by remote plasma nitridation (RPN) of N/sub 2/O-grown oxides subsequently followed by NO RTA treatment (N/sub 2/O+RPN+NO process) are reported for the first time as a means to extend the reliability scaling limit of SiO/sub 2/- / oxynitride-based gate dielectrics. These films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics of similar thickness (/spl sim/1.4 nm) fabricated by different processes. |
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ISBN: | 0780373529 9780780373525 |
DOI: | 10.1109/RELPHY.2002.996646 |