Temperature Distribution of an IGBT Chip during Repetitive Switching Events under Consideration of Front-Side Ageing

Ageing effects are considered to provoke an inhomogeneous current distribution within power devices. The resulting temperature distribution at the junction and the surface of an IGBT chip was investigated in detail at different ageing states and for different switching frequencies during repetitive...

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Bibliographic Details
Published in2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) pp. 1 - 11
Main Authors Baumler, Christian, Zhang, Bo, Goller, Maximilian, Liu, Xing, Basler, Thomas
Format Conference Proceeding
LanguageEnglish
Published EPE Association 05.09.2022
Subjects
Aging
IGBT
Insulated gate bipolar transistors
Module temperature measurement
Reliability
Switching frequency
Temperature distribution
Temperature measurement
Temperature sensors
Uncertainty
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Summary:Ageing effects are considered to provoke an inhomogeneous current distribution within power devices. The resulting temperature distribution at the junction and the surface of an IGBT chip was investigated in detail at different ageing states and for different switching frequencies during repetitive hard-switching events. Furthermore, the limitations of utilized methods for temperature determination were discussed. The observations were judged with respect to reliability issues.