ALD Characteristic Study of Al2O3 Film Deposited by a Dual Single-Wafer Process Chamber

• Published in: 2022 China Semiconductor Technology International Conference (CSTIC) pp. 1 - 4
• Main Authors: Zhang, Ge, Chen, Qihang, Kim, Gi, Chang, Sean
• Format: Conference Proceeding
• Language: English
• Published: IEEE 20.06.2022
• Subjects: A1203; ALD; Atomic layer deposition; Behavioral sciences; Linearity; Performance evaluation; Pulse; Purge; Saturation; Semiconductor device manufacture; Single Wafer Chamber; Step coverage; Surface treatment; Thin films; Water
• DOI: 10.1109/CSTIC55103.2022.9856923

The technological importance of ALD (atomic layer deposition) process in the semiconductor business is more evident than ever before as the device structures become more and more challenging to deposit with various thin films. Therefore, it is highly beneficial to have more capable ALD equipment in the semiconductor manufacturing. The performance of a newly designed dual single-chamber ALD system has been evaluated by examination of basic process results obtained with the system. Al 2 O 3 film was selected for the process characterization with the ALD chamber. The ALD growth linearity, and pulse-and-purge saturation behavior were evaluated. The degree of ALD saturation was also confirmed by step coverage test.