ALD Characteristic Study of Al2O3 Film Deposited by a Dual Single-Wafer Process Chamber

The technological importance of ALD (atomic layer deposition) process in the semiconductor business is more evident than ever before as the device structures become more and more challenging to deposit with various thin films. Therefore, it is highly beneficial to have more capable ALD equipment in...

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Bibliographic Details
Published in2022 China Semiconductor Technology International Conference (CSTIC) pp. 1 - 4
Main Authors Zhang, Ge, Chen, Qihang, Kim, Gi, Chang, Sean
Format Conference Proceeding
LanguageEnglish
Published IEEE 20.06.2022
Subjects
A1203
ALD
Atomic layer deposition
Behavioral sciences
Linearity
Performance evaluation
Pulse
Purge
Saturation
Semiconductor device manufacture
Single Wafer Chamber
Step coverage
Surface treatment
Thin films
Water
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Summary:The technological importance of ALD (atomic layer deposition) process in the semiconductor business is more evident than ever before as the device structures become more and more challenging to deposit with various thin films. Therefore, it is highly beneficial to have more capable ALD equipment in the semiconductor manufacturing. The performance of a newly designed dual single-chamber ALD system has been evaluated by examination of basic process results obtained with the system. Al 2 O 3 film was selected for the process characterization with the ALD chamber. The ALD growth linearity, and pulse-and-purge saturation behavior were evaluated. The degree of ALD saturation was also confirmed by step coverage test.
DOI:10.1109/CSTIC55103.2022.9856923