Fabrication and characterization of Al/sub x/Ga/sub 1-x/N/GaN heterostructures with high mobility of two-dimensional electron gas

Modulation-doped Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures with different Al/sub 0.22/Ga/sub 0.78/N barrier thickness were grown by means of metal-organic chemical vapor deposition. The Al/sub 0.22/Ga/sub 0.78/N layer is still pseudomorphic growth when its thickness is 53 nm. The mobility of th...

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Published in2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Vol. 2; pp. 1191 - 1194 vol.2
Main Authors Shen, B., Zhou, Y.G., Zheng, Z.W., Liu, J., Zhou, H.M., Qian, Y., Zhang, R., Shi, Y., Zheng, Y.D.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2001
Subjects
Atomic layer deposition
Epitaxial layers
Fabrication
Gallium nitride
Ohmic contacts
Reflection
Root mean square
Shape
Temperature dependence
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Summary:Modulation-doped Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures with different Al/sub 0.22/Ga/sub 0.78/N barrier thickness were grown by means of metal-organic chemical vapor deposition. The Al/sub 0.22/Ga/sub 0.78/N layer is still pseudomorphic growth when its thickness is 53 nm. The mobility of the two dimensional electron gas (2DEG) at the heterointerfaces is much higher than that of the electrons in GaN films at both 300 K and 77 K. The dramatic decrease of the 2DEG mobility in an Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructure corresponds to the partial relaxation of the Al/sub 0.22/Ga/sub 0.78/N barrier.
ISBN:0780365208
9780780365209
DOI:10.1109/ICSICT.2001.982112