A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

• Published in: Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212) pp. 143 - 146
• Main Authors: Joseph, A., Coolbaugh, D., Zierak, M., Wuthrich, R., Geiss, P., He, Z., Liu, X., Orner, B., Johnson, J., Freeman, G., Ahlgren, D., Jagannathan, B., Lanzerotti, L., Ramachandran, V., Malinowski, J., Chen, H., Chu, J., Gray, P., Johnson, R., Dunn, J., Subbanna, S., Schonenberg, K., Harame, D., Groves, R., Watson, K., Jadus, D., Meghelli, M., Rylyakov, A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2001
• Subjects: BiCMOS integrated circuits; Boron; CMOS process; CMOS technology; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Resistors; Silicon germanium
• ISBN: 9780780370197; 0780370198
• DOI: 10.1109/BIPOL.2001.957877

A BiCMOS technology is presented that integrates a high performance NPN (f/sub T/=120 GHz and f/sub max/=100 GHz), ASIC compatible 0.11 /spl mu/m L/sub eff/ CMOS, and a full suite of passive elements. Significant HBT performance enhancement compared to previously published results has been achieved through further collector and base profile optimization guided by process and device simulations. Base transit time reduction was achieved by simultaneously increasing the Ge ramp and by limiting the base diffusion with the addition of carbon doping to SiGe epitaxial base. This paper describes IBM's next generation SiGe BiCMOS production technology targeted at the communications market.