Silicon Photonic Micro-Ring Modulator-based 4 x 112 Gb/s O-band WDM Transmitter with Ring Photocurrent-based Thermal Control in 28nm CMOS

We present a 4λ×112 Gb/s/λ hybrid-integrated silicon photonic TX suitable for 400G Ethernet modules and co-packaged optics. The photonic IC (PIC) uses cascaded micro-ring modulators (MRMs) with integrated heaters for efficient wavelength division multiplexing (WDM). The 28nm CMOS electronic IC inclu...

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Published in2021 Symposium on VLSI Technology pp. 1 - 2
Main Authors Sharma, Jahnavi, Li, Hao, Xuan, Zhe, Kumar, Ranjeet, Hsu, Chun-Ming, Sakib, Meer, Liao, Peicheng, Rong, Haisheng, Jaussi, James, Balamurugan, Ganesh
Format Conference Proceeding
LanguageEnglish
Published Japan Society of Applied Physics (JSAP) 13.06.2021
Subjects
Modulation
MRM
O-band
optical TX
ring modulator
Ring modulator TX
Silicon
Silicon photonic circuits
Temperature measurement
Temperature sensors
Very large scale integration
Wavelength division multiplexing
Wavelength measurement
WDM
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Summary:We present a 4λ×112 Gb/s/λ hybrid-integrated silicon photonic TX suitable for 400G Ethernet modules and co-packaged optics. The photonic IC (PIC) uses cascaded micro-ring modulators (MRMs) with integrated heaters for efficient wavelength division multiplexing (WDM). The 28nm CMOS electronic IC includes PAM4 MRM drivers with nonlinear FFE and control circuits to stabilize MRM performance against process and temperature variations. A thermal control scheme based on sensing MRM photocurrents is used to minimize monitoring hardware in the PIC. Measured results demonstrate 112 Gb/s PAM4 operation with <0.7 dB TDECQ from each of the 4 channels. To our best knowledge, this is the highest per-λ data rate reported for an O-band ring-based WDM transmitter.
ISSN:2158-9682